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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
150 C
600
100
V GS = 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
300
100
o
25 C
-55 C
10
10
o
o
2. T C = 25 C
2
0.02
*Notes:
1. 250 μ s Pulse Test
o
0.1 1
10
1
2
*Notes:
1. V DS = 10V
2. 250 μ s Pulse Test
3 4 5
6
V DS , Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.0040
V GS , Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
100
150 C
25 C
0.0035
0.0030
V GS = 10V
V GS = 20V
10
o
o
*Notes:
*Note: T C = 25 C
0.0025
0
60
120 180 240 300 360
o
1
0.2
1. V GS = 0V
2. 250 μ s Pulse Test
0.4 0.6 0.8 1.0
1.2
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
V SD , Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10000
Ciss = Cgs + Cgd ( Cds = shorted )
Coss = Cds + Cgd
10
Crss = Cgd
C iss
*Note:
1. V GS = 0V
2. f = 1MHz
8
6
V DS = 20V
V DS = 50V
V DS = 80V
5000
C oss
4
2
C rss
100
0.1
1 10
V DS , Drain-Source Voltage [V]
30
0
0
*Note: I D = 75A
30 60
Q g , Total Gate Charge [nC]
90
?2011 Fairchild Semiconductor Corporation
FDB035N10A Rev. C2
3
www.fairchildsemi.com
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